Heterogeneously structured phase-change materials and memory

Phase-change memory (PCM), a non-volatile technology, is considered the most promising candidate for storage class and neuro-inspired devices. It generally fabricated based on GeTe–Sb2Te3 pseudo-binary alloys. However, natively, it has technical limitations, such as noise drift in electrical resistance high current operation real-world device applications. Recently, heterogeneously structured PCMs (HET-PCMs), where phase-change materials are hetero-assembled with functional (barrier) cell, have shown dramatic enhancement performance by reducing inherent limitations. In this Perspective, we introduce recent developments HET-PCMs relevant mechanisms of comparison those conventional alloy-type PCMs. We also highlight corresponding enhancements, particularly their thermal stability, endurance, RESET density, SET speed, drift. Last, provide an outlook research directions including PCM-based neuromorphic computing.